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Preparation and property investigation of vanadium oxide thin films
Author
Lim, Siew Ping
Supervisor
Xu, Shuyan
Abstract
Thin films of the vanadium oxides on glass substrate and silicon substrate were prepared by means of rf (radio-frequency) magnetron sputtering. The first aim of this study is to investigate the most prominent parameters enabling the deposition of vanadium oxide "smart" thin films. Conditions of deposition were optimized in terms of substrate temperature (370 oC - 550 oC), oxygen gas ratio (0.3 sccm - 5 sccm), working pressure (10 mTorr - 50 mTorr), and other controlling parameters. The second aim of this study is to investigate the structural and optical properties of vanadium oxide thin films and how these properties are affected by different thin-film preparation conditions. The thin films were characterised by Raman Spectroscopy, Ultraviolet-Visible Spectroscopy (UV/Vis), X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), and Field Emission Scanning Electron Microscopy (FE-SEM).
XRD and Raman studies have shown crystallinity of vanadium oxide. The percentage of transmittance measurements performed in temperatures range from room temperature to 95oC. Thin film samples show decreases of optical transmittance were further investigated using X-ray photoelectron spectroscopy (XPS) in which a surface sensitive is employed to study the surface composition and electronic state of a sample. In this study it was used to establish the presence of vanadium dioxide (VO2) in thin film samples, where VO2 is a well-known material exhibiting a phase transformation near room temperature from a nonconducting (semiconductoring) stage to a conducting stage.
Surface morphology of the thin films was examined by using FE-SEM. The orientation and particle size of vanadium oxide thin film was presented from the SEM micrograph. The same reproducible deposition method is successfully applied to grow thicker thin film.
XRD and Raman studies have shown crystallinity of vanadium oxide. The percentage of transmittance measurements performed in temperatures range from room temperature to 95oC. Thin film samples show decreases of optical transmittance were further investigated using X-ray photoelectron spectroscopy (XPS) in which a surface sensitive is employed to study the surface composition and electronic state of a sample. In this study it was used to establish the presence of vanadium dioxide (VO2) in thin film samples, where VO2 is a well-known material exhibiting a phase transformation near room temperature from a nonconducting (semiconductoring) stage to a conducting stage.
Surface morphology of the thin films was examined by using FE-SEM. The orientation and particle size of vanadium oxide thin film was presented from the SEM micrograph. The same reproducible deposition method is successfully applied to grow thicker thin film.
Date Issued
2006
Call Number
QD181.V2 Lim
Date Submitted
2006