Please use this identifier to cite or link to this item: http://hdl.handle.net/10497/16445
Title: 
Spectroscopic study of deep level emissions from acceptor defects in ZnO thin films with oxygen rich stoichiometry
Authors: 
Keywords: 
ZnO
Structural defects and photoluminescence
Issue Date: 
2013
Citation: 
Usman Ilyas, Rawat, R. S., & Tan, A. T. L. (2013). Spectroscopic study of deep level emissions from acceptor defects in ZnO thin films with oxygen rich stoichiometry. COSMOS, 9(1), 1-7.
Abstract: 
This paper reports the tailoring of acceptor defects in oxygen rich ZnO thin ¯lms at di®erent postdeposition
annealing temperatures (500-800 degree C) and Mn doping concentrations. The XRD
spectra exhibited the nanocrystalline nature of ZnO thin films along with inconsistent variation in
lattice parameters suggesting the temperature-dependent activation of structural defects. Photoluminescence
emission spectra revealed the temperature dependent variation in deep level
emissions (DLE) with the presence of acceptors as dominating defects. The concentration of
native defects was estimated to be increased with temperature while a reverse trend was observed
for those with increasing doping concentration. A consistent decrease in DLE spectra, with
increasing Mn content, revealed the quenching of structural defects in the optical band gap of ZnO
favorable for good quality thin films with enhanced optical transparency.
URI: 
ISSN: 
0219-6077
Other Identifiers: 
10.1142/S0219607713500043
Appears in Collections:Journal Articles

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