Please use this identifier to cite or link to this item: http://hdl.handle.net/10497/22512
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dc.contributor.authorOuyang, Boen
dc.contributor.authorChao, Dongliangen
dc.contributor.authorJia, Guichongen
dc.contributor.authorZhang, Zhengen
dc.contributor.authorKan, Erjunen
dc.contributor.authorJin Fan, Hongen
dc.contributor.authorRawat, Rajdeep Singhen
dc.date.accessioned2020-11-12T08:35:36Z-
dc.date.available2020-11-12T08:35:36Z-
dc.date.issued2020-
dc.identifier.citationOuyang, B., Chao, D., Jia, G., Zhang, Z., Kan, E., Fan, H. J., & Rawat, R. S. (2021). C-plasma derived precise volumetric buffering for high-rate and stable alloying-type energy storage. Nano Energy, 80, Article 105557. https://doi.org/10.1016/j.nanoen.2020.105557en
dc.identifier.issn22112855 (print)-
dc.identifier.urihttp://hdl.handle.net/10497/22512-
dc.descriptionThis is the original draft, prior to peer-review, of a manuscript published in Nano Energy. The published version is available online at https://doi.org/10.1016/j.nanoen.2020.105557en
dc.description.abstractThe void introduction for high-energy alloying-type electrode has suffered a dilemma between insufficient void leading to structural collapse and excessive void causing low volumetrical utilization ratio. Herein, a novel tunable void structure of SnO2-void-hierarchically vertical graphene (SnO2□hVG) nanoarray has been designed via facile C-plasma technique, which facilitates simultaneous encapsulation of protective vertical graphene and moderate void formation. Benefiting from the tunable void and interconnected highly conductive graphene shells and backbones, our all-in-one framework delivers excellent structural integrity and superior Li+ storage capabilities due to the precise volume buffering without collapse of structure and extravagant void. As a result, an imposing capacity of 650 mA h g−1 at 2 A g−1 and negligible capability degradation after 1000 cycles can be achieved. This result opens a new opportunity in tunable void design to enhance the electrochemical performance of alloying-type electrode materials.en
dc.language.isoenen
dc.subjectCarbon plasmaen
dc.subjectPrecise volumetric bufferingen
dc.subjectVertical graphene encapsulationen
dc.subjectTunable voiden
dc.subjectAlloying-type energy storageen
dc.titleC-plasma derived precise volumetric buffering for high-rate and stable alloying-type energy storageen
dc.typeArticleen
dc.description.projectRI 6/14 RSR-
dc.description.projectRS 6/18 RSR-
dc.identifier.doi10.1016/j.nanoen.2020.105557-
dc.grant.idNSFC 51522206en
dc.grant.idNSFC 11774173en
dc.grant.idNSFC 1157415en
dc.grant.idNSFC 51790492en
dc.grant.idNo.30915011203-
dc.grant.idNo.30915011203-
dc.grant.idNo.30918011334-
dc.grant.idNIE Academic Research Fund-
dc.grant.idResearch Support for Senior Academic Administrators-
dc.grant.fundingagencyNanjing University of Science and Technologyen
dc.grant.fundingagencyFundamental Research Funds for the Central Universities Chinaen
dc.grant.fundingagencyNational Institute of Education, Nanyang Technological University, Singapore.-
local.message.claim2021-12-22T11:38:33.426+0800|||rp00046|||submit_approve|||dc_contributor_author|||None*
item.grantfulltextEmbargo_20230301-
item.languageiso639-1en-
item.openairetypeArticle-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith file-
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