Options
Synthesis of crystalline silicon nitride by a high density RF inductively coupled plasma
Author
Abdul Mannan
Supervisor
Xu, Shuyan
Abstract
Silicon nitride (P-Si3N4) films were synthesised on single crystal silicon (100) substrates using a low frequency, high density, inductively coupled radio frequency plasma source in a mixture of argon, hydrogen and nitrogen plasmas. The influence of DC substrate bias and the processing time on the property of the processed films was investigated. The main mechanisms involved in the process were ion implantation combined with plasma enhanced thermal diffusion. The properties and characteristics of the films analysed using various advanced analytic tools that included infrared spectroscopy (R),X -ray diffraction (XRD), energy dispersive X-ray (EDX) and scanning electron microscopy (SEM). In addition, surface hardness of the processed samples was measured using Vickers microhardness test.
All the results indicate that crystalline silicon nitride films of good quality have been synthesised through the process. Vickers hardness test results testify that the processed silicon's surface hardness has increased.
All the results indicate that crystalline silicon nitride films of good quality have been synthesised through the process. Vickers hardness test results testify that the processed silicon's surface hardness has increased.
Date Issued
1997
Call Number
TA2020 Abd
Date Submitted
1997